收藏本站
August 2001
FDC3601N
Dual N-Channel 100V Specified PowerTrench ? MOSFET
General Description
Features
? 1.0 A, 100 V.
R DS(ON) = 500 m ? @ V GS = 10 V
These N-Channel 100V specified MOSFETs are
produced using Fairchild Semiconductor's advanced
PowerTrench process that has been especially tailored
to minimize on-state resistance and yet maintain low
gate charge for superior switching performance.
These devices have been designed to offer exceptional
power dissipation in a very small footprint for
applications where the bigger more expensive SO-8
and TSSOP-8 packages are impractical.
Applications
? Load switch
? Battery protection
? Power management
D2
R DS(ON) = 550 m ? @ V GS = 6.0 V
? Low gate charge (3.7nC typical)
? Fast switching speed.
? High performance trench technology for extremely
low R DS(ON) .
? SuperSOT TM -6 package: small footprint 72%
(smaller than standard SO-8); low profile (1mm thick).
D1
S1
4
5
3
2
SuperSOT -6
TM
G1
S2
G2
6
1
Absolute Maximum Ratings
T A =25 o C unless otherwise noted
Symbol
V DSS
V GSS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Ratings
100
± 20
Units
V
V
I D
Drain Current
– Continuous
(Note 1a)
1.0
A
– Pulsed
4.0
P D
Power Dissipation for Single Operation
(Note 1a)
0.96
W
(Note 1b)
(Note 1c)
0.9
0.7
T J , T STG
Operating and Storage Junction Temperature Range
? 55 to +150
° C
Thermal Characteristics
R θ JA
R θ JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
130
60
° C/W
° C/W
Package Marking and Ordering Information
Device Marking
.601
Device
FDC3601N
Reel Size
7’’
Tape width
8mm
Quantity
3000 units
? 2001 Fairchild Semiconductor Corporation
FDC3601N Rev C(W)
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
FDC3612_F095 MOSFET N-CH 100V 2.6A 6-SSOT
FDC365P MOSFET P-CH 35V 4.3A 6-SSOT
FDC5612_F095 MOSFET N-CH 60V 4.3A 6-SSOT
FDC5614P_D87Z MOSFET P-CH 60V 3A 6SSOT
FDC5661N_F085 MOSFET N-CH 60V 6-SSOT
FDC602P_F095 MOSFET P-CH 20V 5.5A 6SSOT
FDC604P MOSFET P-CH 20V 5.5A SSOT-6
FDC606P MOSFET P-CH 12V 6A SSOT-6
相关代理商/技术参数
FDC3601N 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET
FDC3612 功能描述:MOSFET 100V NCh PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDC3612 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET
FDC3612_F095 功能描述:MOSFET 100V 2.6A N-CH POWERTRENCH RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDC3616N 功能描述:MOSFET 100V NCh PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDC3616N 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET
FDC3616N_Q 功能描述:MOSFET 100V NCh PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDC365P 功能描述:MOSFET -35V P-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube